Semiconductor device, charge pumping circuit, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C327S536000, C365S184000, C257SE29345

Reexamination Certificate

active

07956397

ABSTRACT:
A semiconductor device comprising:a first well region which is formed at a surface portion of a semiconductor substrate and to which a first voltage is applied;a gate insulating film which is formed on the first well region;a gate electrode which is formed on the gate insulating film and has a polarity different from a polarity of the first well region and to which a second voltage is applied; andan element isolating region which is formed at a surface portion of the first well region to surround a region within the first well region that is opposed to the gate insulating film,wherein a capacitance is formed between the region within the first well region surrounded by the element isolating region and the gate electrode.

REFERENCES:
patent: 5828095 (1998-10-01), Merritt
patent: 5998826 (1999-12-01), Hung et al.
patent: 6549458 (2003-04-01), Rao et al.
patent: 2003/0022445 (2003-01-01), Taniguchi et al.
patent: 2000-216253 (2000-08-01), None
patent: 2003-115537 (2003-04-01), None
patent: 2003-243521 (2003-08-01), None
patent: 2003-297936 (2003-10-01), None

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