Method of forming a metal directly on a conductive barrier...

Details Method of forming a metal directly on a conductive barrier... Method of forming a metal directly on a conductive barrier...

2011-07-19

2011-07-19

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S691000, C438S627000, C438S745000, C438S704000, C438S115000, C257S774000, C257S751000, C257S682000

Reexamination Certificate

active

07981793

ABSTRACT:
By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 053 600.5-33 dated Jun. 20, 2008.

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