Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2011-04-05
2011-04-05
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S781000, C257SE23114
Reexamination Certificate
active
07919843
ABSTRACT:
There is provided a semiconductor device10including a solder resist16for protecting a wiring pattern14electrically connected to a semiconductor chip11via an internal connection terminal12, characterized in that the solder resist16is arranged to cover the upper surface of the portion of the wiring pattern14not corresponding to the arrangement region of the external connection terminal17and the side surface14B of the wiring pattern14and that the area of the solder resist16assumed when the upper surface13A of an insulation layer13is viewed from above is substantially the same as that of the wiring pattern14assumed when the upper surface13A of the insulation layer13is viewed from above.
REFERENCES:
patent: 6355500 (2002-03-01), Miyazaki et al.
patent: 2008-084958 (2008-04-01), None
Drinker Biddle & Reath LLP
Monbleau Davienne
Shinko Electric Industries Co. Ltd.
Trinh Hoa B
LandOfFree
Semiconductor device and its manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and its manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and its manufacturing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2718445