Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2011-06-14
2011-06-14
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S702000, C257SE21548
Reexamination Certificate
active
07960285
ABSTRACT:
A method for the production of a component structure. On embodiment provides a semiconductor body having a first side. A first trench and a second trench are produced, which extend into the semiconductor body proceeding from the first side and are arranged at a distance from one another in a lateral direction of the semiconductor body. A first material layer in the first trench is produced. A third trench proceeding from the second trench is produced, extending as far as the first material layer in the first lateral direction.
REFERENCES:
patent: 6100177 (2000-08-01), Noguchi
patent: 6472290 (2002-10-01), Cho et al.
patent: 6517734 (2003-02-01), Muller et al.
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Stark Jarrett J
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