Method for the production of a component structure

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S702000, C257SE21548

Reexamination Certificate

active

07960285

ABSTRACT:
A method for the production of a component structure. On embodiment provides a semiconductor body having a first side. A first trench and a second trench are produced, which extend into the semiconductor body proceeding from the first side and are arranged at a distance from one another in a lateral direction of the semiconductor body. A first material layer in the first trench is produced. A third trench proceeding from the second trench is produced, extending as far as the first material layer in the first lateral direction.

REFERENCES:
patent: 6100177 (2000-08-01), Noguchi
patent: 6472290 (2002-10-01), Cho et al.
patent: 6517734 (2003-02-01), Muller et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for the production of a component structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the production of a component structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the production of a component structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2718111

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.