Semiconductor device having a modified recess channel gate...

Details Semiconductor device having a modified recess channel gate... Semiconductor device having a modified recess channel gate...

2011-04-26

2011-04-26

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S534000, C257SE29201

Reexamination Certificate

active

07932554

ABSTRACT:
A semiconductor device having a modified recess channel gate includes active regions defined by a device isolation layer and arranged at regular intervals on a semiconductor substrate, each active region extending in a major axis and a minor axis direction, a trench formed in each active region, the trench including a stepped bottom surface in the minor axis direction of the active region, and a recess gate formed in the trench.

REFERENCES:
patent: 6239465 (2001-05-01), Nakagawa
patent: 2005/0042833 (2005-02-01), Park et al.
patent: 2005/0087776 (2005-04-01), Kim
patent: 2006/0118889 (2006-06-01), Suh
patent: 2006/0128138 (2006-06-01), Xin
patent: 2006/0211203 (2006-09-01), Kim et al.
patent: 2006/0273381 (2006-12-01), Kim et al.
patent: 1020040051931 (2004-06-01), None
patent: 1020060039366 (2006-05-01), None

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