SRAM device, and SRAM device design structure, with...

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S188000, C365S189110

Reexamination Certificate

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08009461

ABSTRACT:
A semiconductor device includes a SRAM having a pair of MCSFETs connected as access transistors (pass gates). A design structure embodied or stored in a machine readable medium includes a SRAM having two MCSFETs connected as access transistors.

REFERENCES:
patent: 5982211 (1999-11-01), Ko
patent: 6087886 (2000-07-01), Ko
patent: 6181608 (2001-01-01), Keshavarzi et al.
patent: 6363006 (2002-03-01), Naffziger et al.
patent: 6573549 (2003-06-01), Deng et al.
patent: 6614696 (2003-09-01), Kanno et al.
patent: 6784028 (2004-08-01), Rueckes et al.
patent: 6835591 (2004-12-01), Rueckes et al.
patent: 6836424 (2004-12-01), Segal et al.
patent: 6849492 (2005-02-01), Helm et al.
patent: 6911682 (2005-06-01), Rueckes et al.
patent: 6919592 (2005-07-01), Segal et al.
patent: 6920061 (2005-07-01), Bhavnagarwala et al.
patent: 6942921 (2005-09-01), Rueckes et al.
patent: 6979590 (2005-12-01), Rueckes et al.
patent: 7056758 (2006-06-01), Segal et al.
patent: 7120047 (2006-10-01), Segal et al.
patent: 7123529 (2006-10-01), Hanson et al.
patent: 7170809 (2007-01-01), Joshi
patent: 7176505 (2007-02-01), Rueckes et al.
patent: 7177176 (2007-02-01), Zheng et al.
patent: 7189607 (2007-03-01), Helm et al.
patent: 7217978 (2007-05-01), Joshi et al.
patent: 7242239 (2007-07-01), Hanson et al.
patent: 7295458 (2007-11-01), Chan et al.
patent: 7453716 (2008-11-01), Kim et al.
patent: 7471544 (2008-12-01), Nakazato et al.
patent: 2006/0273393 (2006-12-01), Chidambarrao et al.
patent: 2006/0281236 (2006-12-01), Datta et al.

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