Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-04-26

2011-04-26

Stark, Jarrett J (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S365000, C257SE27060, C257SE21626, C438S275000

Reexamination Certificate

active

07932564

ABSTRACT:
A semiconductor device according to an embodiment includes: a fin type MOSFET having a first gate electrode, and a first gate insulating film for generating Fermi level pinning in the first gate electrode; and a planar type MOSFET having a second gate electrode, and a second gate insulating film for generating no Fermi level pinning in the second gate electrode, or generating Fermi level pinning weaker than that generated in the first gate electrode in the second gate electrode.

REFERENCES:
patent: 3638039 (1972-01-01), Chen et al.
patent: 6563182 (2003-05-01), Horikawa
patent: 6911383 (2005-06-01), Doris et al.
patent: 6949768 (2005-09-01), Anderson et al.
patent: 7202535 (2007-04-01), Goldbach et al.
patent: 2005/0280104 (2005-12-01), Li
patent: 2006/0043497 (2006-03-01), Kimizuka et al.
patent: 2006/0192258 (2006-08-01), Tsuchiya et al.
patent: 2006/0275988 (2006-12-01), Yagishita et al.
patent: 2006/0292784 (2006-12-01), Sohn et al.
patent: 2007/0034902 (2007-02-01), Kamimuta et al.
patent: 2007/0045748 (2007-03-01), Booth et al.
patent: 2007/0075351 (2007-04-01), Schulz et al.
patent: 2007/0099353 (2007-05-01), Thean et al.
patent: 2007/0128791 (2007-06-01), Iwaki
patent: 2007/0257320 (2007-11-01), Nabatame et al.
patent: 2008/0128822 (2008-06-01), Koyama et al.
patent: 2008/0214015 (2008-09-01), Boescke
patent: 2008/0303096 (2008-12-01), Schulz
patent: 2006-278376 (2006-10-01), None
patent: 2006-339514 (2006-12-01), None
patent: 2007-27743 (2007-02-01), None
patent: 2007-123867 (2007-05-01), None
patent: 2007-158065 (2007-06-01), None
patent: 2008-517464 (2008-05-01), None
patent: WO 2005-020325 (2005-03-01), None
patent: WO 2006/044349 (2006-04-01), None
H. Kawasaki, “Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit forhp32 nm node and beyond”, Symposium on VLSI Technology Digest of Techical Papers, 2006 IEEE, pp. 86-87.

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2717178