Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-06-14
2011-06-14
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML, C250S298000, C250S492200
Reexamination Certificate
active
07960709
ABSTRACT:
An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form BnHx+and BnHx−where 10<n<100 and 0<x<n+4.
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Horsky Thomas N.
Jacobson Dale C.
Katten Muchin & Rosenman LLP
Paniaguas John S.
SemEquip Inc.
Smith Johnnie L
Wells Nikita
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