Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-04-05
2011-04-05
Nguyen, Thinh T (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S588000, C438S584000, C257S249000, C257S384000
Reexamination Certificate
active
07919405
ABSTRACT:
A semiconductor device and a manufacturing method thereof that can prevent mutual diffusion of impurity in a silicide layer and can decrease sheet resistance of an N-type polymetal gate electrode and a P-type polymetal gate electrode, respectively in the semiconductor device having gate electrodes of a polymetal gate structure and a dual gate structure are provided. The P-type polymetal gate electrode includes a P-type silicon layer containing P-type impurity, a silicide layer formed on the P-type silicon layer and having a plurality of silicide grains which are discontinuously disposed in a direction substantially parallel with the surface of the semiconductor substrate, a silicon film continuously formed on the surface of the P-type silicon layer exposed on the discontinuous part of the silicide layer and on the surface of the silicide layer, a second metal nitride layer formed on the silicon film, and a metal layer formed on the metal nitride layer.
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Elpida Memory Inc.
McDermott Will & Emery LLP
Nguyen Thinh T
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