Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-26
2011-07-26
Stark, Jarrett J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27104, C365S173000
Reexamination Certificate
active
07985994
ABSTRACT:
Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.
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Zheng et al., Low Switching Current Flux-C
Dimitrov Dimitar V.
Zheng Yuankai
Campbell Nelson Whipps LLC
Seagate Technology LLC
Stark Jarrett J
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