Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2011-06-14
2011-06-14
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S175000, C365S189011
Reexamination Certificate
active
07961534
ABSTRACT:
A semiconductor memory device includes a read/write bit line configured to supply a cell driving voltage. A selecting unit is connected to the read/write bit line and is controlled by a word line. A plurality of cells are connected between the selecting unit and a source line, and the cells are configured to read and write data according to a cell driving voltage. Each switching element of a plurality of switching elements are connected in parallel with a single cell of the plurality of cells, and the plurality of switching elements are controlled selectively by a plurality of bit lines.
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Hong Suk Kyoung
Kang Hee Bok
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Yoha Connie C
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