Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-03-15
2011-03-15
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257S103000, C257SE33068, C257SE33074
Reexamination Certificate
active
07906791
ABSTRACT:
Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is λ, an index of refraction of the ZnO layer at the wavelength λ is nzλ, and a total reflection angle at an interface between the ZnO layer and a medium in contact therewith is θz, a periodic interval Lzbetween adjacent concave portions is set in a range of λ
zλ≦Lz≦λ/(nzλ×(1−sin θz)).
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Cantor & Colburn LLP
Rohm & Co., Ltd.
Sefer A.
Woldegeorgis Ermias
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