Image sensor

Details Image sensor Image sensor

2011-01-11

2011-01-11

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S293000, C257SE27133

Reexamination Certificate

active

07868364

ABSTRACT:
Embodiments relate to and image sensor. In embodiments, the image sensor may include a semiconductor substrate, a photodiode region, a gate electrode, a dummy gate, and an interlayer dielectric layer. The semiconductor substrate includes a field oxide layer. The photodiode region may be formed on the semiconductor substrate. The gate electrode may be formed on the semiconductor substrate. The dummy gate may be formed on the field oxide layer. The interlayer dielectric layer may be formed on one side of the dummy gate and includes an opening exposing the photodiode region.

REFERENCES:
patent: 6963092 (2005-11-01), Lee
patent: 2004/0132262 (2004-07-01), Ayabe et al.
patent: 2004/0140564 (2004-07-01), Lee et al.
patent: 2006/0157761 (2006-07-01), Park et al.
patent: 10-2004-0065963 (2004-07-01), None
patent: 10-2005-0106930 (2005-11-01), None

Affiliated with

Also associated with

Rating

Image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2713683