Method of manufacturing semiconductor integrated circuit device

Details Method of manufacturing semiconductor integrated circuit device Method of manufacturing semiconductor integrated circuit device

2011-06-21

2011-06-21

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S660000, C438S653000, C257SE21584

Reexamination Certificate

active

07964500

ABSTRACT:
To solve a problem that it becomes difficult to lower contact resistance between nickel-based metal silicide and metal for contact as the result of the miniaturization of the hole. One invention of the present application is a method of manufacturing a semiconductor integrated circuit device having a MISFET subjected to silicidation of a source/drain region and the like by nickel-based metal silicide, the method performing a heat treatment for the upper surface of a silicide film in a non-plasma reducing vapor phase atmosphere containing a gas having a nitrogen-hydrogen bond as one of main gas components, before forming a barrier metal at a contact hole provided at a pre-metal insulating film.

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U.S. Appl. No. 12/622,524.

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