Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-12
2011-04-12
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07923772
ABSTRACT:
A semiconductor device with a semiconductor body and to a method for producing it. In one embodiment, the semiconductor body has first electrodes which contact first highly doped semiconductor zones and complementary-conduction body zones surrounding the first semiconductor zones. The semiconductor body has a second electrode which contacts a second highly doped semiconductor zone. Between the second semiconductor zone and the body zones, a drift zone is arranged. Control electrodes which are insulated from the semiconductor body by a gate oxide and act on the body zones for controlling the semiconductor device are arranged on the semiconductor body. The body zones have minority charge carrier injector zones with complementary conduction to the body zones, arranged between the first semiconductor zones and the drift zone.
REFERENCES:
patent: 4831423 (1989-05-01), Shannon
patent: 5617351 (1997-04-01), Bertin et al.
patent: 7745878 (2010-06-01), Bhalla et al.
patent: 2001/0028084 (2001-10-01), Mo
patent: 2002/0195656 (2002-12-01), Hattori
patent: 2005/0082591 (2005-04-01), Hirler et al.
patent: 2005/0161746 (2005-07-01), Mauder et al.
patent: 2006/0076613 (2006-04-01), Ohyanagi et al.
patent: 2006/0267082 (2006-11-01), Hofmann et al.
patent: 2008/0085586 (2008-04-01), Kobayashi
patent: 2009/0008706 (2009-01-01), Yedinak et al.
patent: 2010/0038710 (2010-02-01), Ohtani et al.
patent: 199 50 579 (2008-04-01), None
patent: 2 173 037 (1986-10-01), None
patent: 20050653585 (2005-07-01), None
Mauder Anton
Schulze Hans-Joachim
Dicke, Billig & Czaja P.L.L.C.
Infineon Technologies Austria AG
Nguyen Dao H
Nguyen Tram H
LandOfFree
Semiconductor device with a semiconductor body and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with a semiconductor body and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a semiconductor body and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2712263