Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-04-26
2011-04-26
Evans, Geoffrey S (Department: 3742)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C219S121660
Reexamination Certificate
active
07932139
ABSTRACT:
A method of laser annealing a workpiece for reduction of warpage, slip defects and breakage, the method comprising (a) moving a workpiece through a laser beam in a x-axis first direction, (b) moving the workpiece in a y-axis second direction, (c) moving the workpiece through a laser beam in a minus x-axis first direction and repeating (a)-(c) until the workpiece is fully annealed in two successive laser annealing iterations.
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Bu Haowen
Jain Amitabh
Brady III Wade J.
Evans Geoffrey S
Franz Warren L.
Telecky Jr Frederick J.
Texas Instruments Incorporated
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