Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257SE29309, C257SE21180, C438S287000, C438S288000, C438S527000, C438S530000, C438S593000
Reexamination Certificate
active
07928503
ABSTRACT:
Some embodiments include methods of forming memory cells. Dopant is implanted into a semiconductor substrate to form a pair of source/drain regions that are spaced from one another by a channel region. The dopant is annealed within the source/drain regions, and then a plurality of charge trapping units are formed over the channel region. Dielectric material is then formed over the charge trapping units, and control gate material is formed over the dielectric material. Some embodiments include memory cells that contain a plurality of nanosized islands of charge trapping material over a channel region, with adjacent islands being spaced from one another by gaps. The memory cells can further include dielectric material over and between the nanosized islands, with the dielectric material forming a container shape having an upwardly opening trough therein. The memory cells can further include control gate material within the trough.
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Ho Tu-Tu V
Micro)n Technology, Inc.
Wells St. John P.S.
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