Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-18
2011-01-18
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S466000, C257S496000, C257S321000, C257SE29200, C257SE29309, C257SE29300, C438S259000
Reexamination Certificate
active
07872297
ABSTRACT:
The present invention relates to a flash memory device and its fabrication method. The device comprises a structure for improving a scaling-down characteristic/performance and increasing memory capacity of the MOS-based flash memory device. A new device structure according to the present invention is based on a recessed channel capable of implementing highly-integrated/high-performance and 2-bit/cell. The proposed device suppresses the short channel effect, reduces the cell area, and enables 2-bit/cell by forming the charge storage node as a spacer inside the recessed channel. Moreover, if selectively removing the dielectric films around the recessed silicon surface, the sides as well as the surface of the recessed channel is exposed. A spacer can be used as a storage node, thereby improving the channel controllability of the control electrode and the on-off characteristic of a device. The proposed structure also resolves the threshold voltage problem and improves the write/erase speeds.
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Chen David Z
Greenblum & Bernstein P.L.C.
SNU & R&DB Foundation
Warren Matthew E
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