Semiconductor device reducing output capacitance due to...

Details Semiconductor device reducing output capacitance due to... Semiconductor device reducing output capacitance due to...

2011-06-28

2011-06-28

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S335000, C438S270000

Reexamination Certificate

active

07968943

ABSTRACT:
Plural through-holes are formed in a region of a semiconductor substrate positioned below a drain region (an element region other than a P-type well region). According to this configuration, an opposing area of the drain region and the semiconductor substrate can be reduced. Therefore, a drain-substrate capacitance Cdsub is reduced, and an output capacitance Coss of an SOI LDMOSFET can be reduced as a result.

REFERENCES:
patent: 6580126 (2003-06-01), Suzumura et al.
patent: 2008/0038921 (2008-02-01), Gouda et al.
patent: 11-186555 (1999-07-01), None
English language Abstract of JP 11-186555, Jul. 9, 1999.

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