Method of forming capacitors having high-K oxygen containing cap

Details Method of forming capacitors having high-K oxygen containing cap Method of forming capacitors having high-K oxygen containing cap

1998-02-28

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438 3, 438240, 438396, H01L 2131, H01L 21469, H01L 2120

Patent

active

061627445

ABSTRACT:
In a capacitor forming method, a first capacitor electrode is formed over a substrate. A high K oxygen containing capacitor dielectric layer is formed over the first capacitor electrode. A first annealing of the high K capacitor dielectric layer is conducted at a temperature of at least about 500.degree. C. in a substantially non-oxidizing atmosphere. After the first annealing, second annealing the high K capacitor dielectric layer occurs at a temperature of less than or equal to about 500.degree. C. in an oxidizing atmosphere. A second capacitor electrode is formed over the high K oxygen containing capacitor dielectric layer, preferably after the second annealing. In another considered implementation, the capacitor dielectric layer is annealed in multiple steps including at least two different temperatures. A second capacitor electrode is formed over the high K oxygen containing dielectric layer, with the substrate not being exposed to a gaseous oxygen containing atmosphere at a temperature of greater than about 500.degree. C. between the capacitor dielectric layer formation and formation of the second capacitor electrode. The invention also contemplates dielectric layer processing apart from capacitor formation, and the fabrication of DRAM circuitry.

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