Method of manufacturing through-via

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S666000, C438S637000, C438S605000, C257SE21597, C257S587000

Reexamination Certificate

active

07998861

ABSTRACT:
Disclosed is a method of manufacturing a through-via. The through-via manufacturing method includes forming a core-via hole in a wafer, forming a suction-via hole adjacent to the core-via hole in the wafer, forming a via core in the core-via hole, forming a polymer-via hole connected to the suction-via hole in the wafer, filling the polymer-via hole with polymer solution by creating a vacuum inside the polymer-via hole by drawing air out of the suction-via hole, and polishing the wafer such that the via core formed in the core-via hole is exposed.

REFERENCES:
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patent: 6221769 (2001-04-01), Dhong et al.
patent: 7183176 (2007-02-01), Sankarapillai et al.
patent: 7495316 (2009-02-01), Kirby et al.
patent: 7863189 (2011-01-01), Basker et al.
patent: 10-2001-0001159 (2001-01-01), None
patent: 10-2005-0030720 (2005-03-01), None
Ho, Soon Wee, et al., “Development of Coaxial Shield Via in Silicon Carrier for High Frequency Application,”2006 Electronics Packaging Technology Conference, Institute of Microelectronics, Singapore, 2006, pp. 825-830.

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