Method for forming metalization for inter-layer connections

Details Method for forming metalization for inter-layer connections Method for forming metalization for inter-layer connections

1998-04-13

2000-12-19

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438636, 438671, 438738, H01L 214763, H01L 2144, H01L 21461

Patent

active

061627240

ABSTRACT:
The present invention provides an improved method for forming metalization layers for inter-layer connections including the steps of first providing a substrate, then depositing a metal layer on the substrate, then depositing a dielectric layer overlying the metal layer, etching away an opening in the dielectric layer to expose at least partially the metal layer, and etching an opening in the metal layer by using the dielectric layer as a mask to at least partially expose the underlying substrate. The method may optionally includes the step of blanket depositing a thin oxide layer and then an inter-level dielectric layer on top of the device.

REFERENCES:
patent: 5350488 (1994-09-01), Webb
patent: 5369053 (1994-11-01), Fang
patent: 5484741 (1996-01-01), Bergemont
patent: 5522520 (1996-06-01), Kawamoto
patent: 5604381 (1997-02-01), Shen
patent: 5700720 (1997-12-01), Hashimoto
patent: 5739045 (1998-04-01), Cronin et al.
patent: 5849637 (1998-12-01), Wang
patent: 5932492 (1999-08-01), Hahm et al.
patent: 6017815 (2000-01-01), Wu

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