Method for forming fine pattern of semiconductor device

Details Method for forming fine pattern of semiconductor device Method for forming fine pattern of semiconductor device

2011-07-12

2011-07-12

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

Reexamination Certificate

active

07977035

ABSTRACT:
A method for manufacturing a fine pattern of a semiconductor device comprising: forming hard mask patterns having a thickness of t1over an underlying layer; forming a light penetrable thin film having a thickness of t2over the hard mask pattern; forming a light absorbable thin film over light penetrable thin film; performing an exposure process on the resulting structure without use of an exposure mask while controlling an amount of exposure energy such that an exposure light reaches a depth T measured from a top surface of the light penetrable thin film to a top surface of the underlying layer such that t2<T≦t1+t2; performing a developing process on the resulting structure to form an organic mask pattern between the hard mask patterns; and etching the underlying layer using the hard mask pattern and the organic mask pattern as an etching mask to form an underlying layer pattern.

REFERENCES:
patent: 6605412 (2003-08-01), Iwata et al.
patent: 2003/0170563 (2003-09-01), Jung et al.
patent: 2006/0141243 (2006-06-01), Ibuki
patent: 2006/0216649 (2006-09-01), Paxton et al.
patent: 2006/0234166 (2006-10-01), Lee et al.
patent: 2006/0292501 (2006-12-01), Shih
patent: 2007/0020565 (2007-01-01), Koh et al.
patent: 2007/0123037 (2007-05-01), Lee et al.
patent: 2007/0178404 (2007-08-01), Brodsky et al.
patent: 515007 (2002-12-01), None
patent: 548789 (2003-08-01), None
patent: 1230976 (2005-04-01), None
patent: PCT/WO2005/034216 (2005-04-01), None

Affiliated with

Also associated with

Rating

Method for forming fine pattern of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming fine pattern of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming fine pattern of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2708524