Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-12-22
2000-12-19
Wilczewski, Mary
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438669, H01L 2144
Patent
active
061627208
ABSTRACT:
A method of manufacturing a semiconductor device. First, a plurality of wires are arranged in parallel to one another, on a semiconductor substrate. Then, insulating films of a first group are formed on tops of the wires, respectively. Next, second insulating films of a second group are formed on sides of the wires, respectively. Further, among the wires there are formed insulating films of a third group which have upper surfaces located at a level not higher than upper surfaces of the insulating films of the second group. Thereafter, contact holes are formed by subjecting the insulating films of the third group to selectively etching. Finally, the contact holes are filled with electrically conductive material.
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Kabushiki Kaisha Toshiba
Lin Yung A.
Wilczewski Mary
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