Power semiconductor component with plate capacitor structure

Details Power semiconductor component with plate capacitor structure Power semiconductor component with plate capacitor structure

2011-01-18

2011-01-18

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29009, C438S212000

Reexamination Certificate

active

07872300

ABSTRACT:
A power semiconductor component (1) contains a weakly doped drift zone (9), a drain zone (10) and a MOS structure (12) situated at the front side (2) of the power semiconductor component (1). An edge plate (6) of the first conductivity type is provided at its edge (8) above the drift zone (9). The edge plate (6) is doped more highly than the drift zone (9). Situated above the edge plate (6) is an insulation layer (24) with an overlying field plate (7) made of polysilicon. The field plate (7) forms together with the edge plate (6) a plate capacitor structure which increases the drain-source output capacitance of the power semiconductor component (1), so that fewer radiofrequency interference disturbances are caused by the power semiconductor component (1) during switching.

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