Methods for atomic layer deposition (ALD) using a proximity...

Details Methods for atomic layer deposition (ALD) using a proximity... Methods for atomic layer deposition (ALD) using a proximity...

2011-05-10

2011-05-10

Meeks, Timothy H (Department: 1715)

Coating processes

Applying superposed diverse coating or coating a coated base

C134S095100, C134S026000, C134S028000

Reexamination Certificate

active

07939139

ABSTRACT:
Provided are methods for processing a substrate using a proximity system defined by one or more meniscus windows on one or more proximity heads. One method includes applying a first fluid meniscus to a surface of the substrate to apply a chemical precursor to the surface of the substrate. The first fluid meniscus is applied to first proximity meniscus window. Then, applying a second fluid meniscus to the surface of the substrate to leave an atomic layer of the chemical precursor on the surface of the substrate, through a second proximity meniscus window. A third fluid meniscus is applied to the surface of the substrate to apply a chemical reactant configured to react with the atomic layer of the chemical precursor to generate a layer of a material, through a third proximity meniscus window. The first, second and third proximity meniscus windows are arranged to apply the first fluid meniscus, the second fluid meniscus and the third fluid meniscus one after the other to a same location of the surface of the substrate during movement of the substrate through the proximity system.

REFERENCES:
patent: 7153400 (2006-12-01), Ravkin et al.
patent: 2005/0139318 (2005-06-01), Woods et al.

Affiliated with

Also associated with

Rating

Methods for atomic layer deposition (ALD) using a proximity... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for atomic layer deposition (ALD) using a proximity..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for atomic layer deposition (ALD) using a proximity... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2707738