Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S221000, C257S222000, C257S225000, C257S226000, C257S227000, C257S228000, C257S229000, C257S231000, C257SE27133, C257SE27150, C257SE27151, C257SE27152
Reexamination Certificate
active
07910964
ABSTRACT:
A part of a semiconductor layer directly under a light-receiving gate electrode functions as a charge generation region, and electrons generated in the charge generation region are injected into a part of a surface buried region directly above the charge generation region. The surface buried region directly under a first transfer gate electrode functions as a first transfer channel, and the surface buried region directly under a second transfer gate electrode functions as a second transfer channel. Signal charges are alternately transferred to an n-type first floating drain region and a second floating drain region through the first and second floating transfer channels.
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Homma Mitsuru
Kawahito Shoji
Joy Jeremy J
National University Corporation Shizuoka University
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sharp Kabushiki Kaisha
Smith Zandra
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