Metal oxide semiconductor, semiconductor element, thin film...

Details Metal oxide semiconductor, semiconductor element, thin film... Metal oxide semiconductor, semiconductor element, thin film...

2011-05-24

2011-05-24

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C257SE21459

Reexamination Certificate

active

07947537

ABSTRACT:
A method of manufacturing a metal oxide semiconductor comprising the step of: conducting a transformation treatment on a semiconductor precursor layer containing a metal salt to form the metal oxide semiconductor, wherein the metal salt comprises one or more metal salts selected from the group consisting of a nitrate, a sulfate, a phosphate, a carbonate, an acetate and an oxalate of a metal; and the semiconductor precursor layer is formed by coating a solution of the metal salt.

REFERENCES:
patent: 5364522 (1994-11-01), Wang
patent: 2001-244464 (2001-09-01), None

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