Semiconductor device

Details Semiconductor device Semiconductor device

2011-05-31

2011-05-31

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29345, C257S068000, C257SE21422, C257SE21545, C257SE21646, C257S071000, C257S301000, C257S315000, C257S316000, C257S329000, C438S259000, C438S175000

Reexamination Certificate

active

07952128

ABSTRACT:
Provided is a metal oxide semiconductor (MOS) capacitor, in which trenches (3) are formed in a charge accumulation region (6) of a p-type silicon substrate (1) to reduce a contact area between the p-type silicon substrate (1) and a lightly doped n-type well region (2), thereby reducing a leak current from the lightly doped n-type well region (2) to the p-type silicon substrate (1).

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