Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-21
2011-06-21
Wilson, Allan R (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000, C257SE29343
Reexamination Certificate
active
07964904
ABSTRACT:
An FeRAM is produced by a method including the steps of forming a lower electrode layer (24), forming a first ferroelectric film (25a) on the lower electrode layer (24), forming on the first ferroelectric film (25a) a second ferroelectric film (25b) in an amorphous state containing iridium inside, thermally treating the second ferroelectric film (25b) in an oxidizing atmosphere to crystallize the second ferroelectric film (25b) and to cause iridium in the second ferroelectric film (25b) to diffuse into the first ferroelectric film (25a), forming an upper electrode layer (26) on the second ferroelectric film (25b), and processing each of the upper electrode layer (26), the second ferroelectric film (25b), the first ferroelectric film (25a), and the lower electrode layer (24) to form the capacitor structure. With such a structure, the inversion charge amount in a ferroelectric capacitor structure (30) is improved without increasing the leak current pointlessly, and a high yield can be assured, thereby realizing a highly reliable FeRAM.
REFERENCES:
patent: 6573542 (2003-06-01), Bruchhaus et al.
patent: 6906367 (2005-06-01), Matsuura et al.
patent: 7217970 (2007-05-01), Marsh
patent: 7368298 (2008-05-01), Wang
patent: 7462898 (2008-12-01), Ozaki
patent: 7473949 (2009-01-01), Cross et al.
patent: 2002/0117700 (2002-08-01), Fox
patent: 2005/0136555 (2005-06-01), Wang
patent: 2005/0156216 (2005-07-01), Cross et al.
patent: 2006/0278954 (2006-12-01), Izumi
patent: 2003-68991 (2003-03-01), None
patent: 2003-128419 (2003-05-01), None
patent: 2005-183841 (2005-07-01), None
patent: 2004-053991 (2004-06-01), None
International Search Report of PCT/JP2006/306654, mailing date of Apr. 25, 2006.
Notification of Transmittal of Translation of the International Preliminary Report on Patentability (Form PCT/IB/338) of International Application No. PCT/JP2006/306654 mailed Oct. 30, 2008 with Form PCT/ISA/237.
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Wilson Allan R
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2704386