Power MOSFET array

Details Power MOSFET array Power MOSFET array

2011-01-18

2011-01-18

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257SE29257

Reexamination Certificate

active

07872307

ABSTRACT:
A power metal-oxide-semiconductor field-effect transistor (MOSFET) array structure is provided. The power MOSFET array is disposed under a gate pad, and space under the gate pad can be well used to increase device integration. When the array and the conventional power MOSFET array disposed under the source pad are connected to an array pair by using circuit connection region, the same gate pad and source pad can be shared, so as to achieve an objective of increasing device integration.

REFERENCES:
patent: 6043125 (2000-03-01), Williams et al.
patent: 7067879 (2006-06-01), Dyer et al.
patent: 2002/0190313 (2002-12-01), Takaishi et al.
patent: 2004/0203200 (2004-10-01), Williams et al.
patent: 2006/0284217 (2006-12-01), Kumar et al.
patent: 2001257349 (2001-09-01), None

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