Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-07-05

2011-07-05

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S384000, C257S388000, C257SE29156, C257SE29161

Reexamination Certificate

active

07973367

ABSTRACT:
In order that a top surface of a gate electrode does not have sharp portions, ends of the top surface of the gate electrode are rounded before refractory metal is deposited for silicidation. This reduces intensive application of film stresses which are generated in heat treatment, enabling formation of a silicide layer with a uniform, sufficient thickness.

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Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2004-204727, mailed Jan. 11, 2011.

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