Semiconductor device comprising a high dielectric constant...

Details Semiconductor device comprising a high dielectric constant... Semiconductor device comprising a high dielectric constant...

2011-01-18

2011-01-18

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S371000, C257SE21191, C438S241000, C438S199000, C438S230000

Reexamination Certificate

active

07872312

ABSTRACT:
A semiconductor device includes a first gate electrode formed in a first region on a semiconductor substrate with a first gate insulating film sandwiched therebetween; and a second gate electrode formed in a second region on the semiconductor substrate with a second gate insulating film sandwiched therebetween. The first gate insulating film includes a first high dielectric constant insulating film with a first nitrogen concentration and the second gate insulating film includes a second high dielectric constant insulating film with a second nitrogen concentration higher than the first nitrogen concentration.

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Hayashi, T., et al., “Cost Worthy and High Performance LSTP CMIS; Poly-Si/HfSiON nMIS and Poly-Si/TiN/HfSiON pMIS”, IEDM Tech. Dig., 2006, pp. 247-250, IEEE.

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