Method of fabricating a CMOS image sensor

Details Method of fabricating a CMOS image sensor Method of fabricating a CMOS image sensor

2011-03-01

2011-03-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S048000, C438S199000, C438S313000, C257S292000, C257SE21002

Reexamination Certificate

active

07897441

ABSTRACT:
A method of fabricating a CMOS image sensor comprising forming an epitaxial layer on a semiconductor substrate, the epitaxial layer comprising a pixel and logic area, forming an STI layer in the epitaxial layer, forming a plurality of wells and a gate pattern having a spacer on the epitaxial layer, forming a plurality of source and drain regions in the epitaxial layer using ion implantation, forming a salicide blocking layer on the epitaxial layer and gate pattern in the pixel area, forming a plurality of silicide layers in the logic area by performing a silicidation process, sequentially forming a PMD liner nitride layer and a PSG layer on the salicide blocking layer in the pixel area and the epitaxial layer and the gate pattern in the logic area, and forming a plurality of contacts connecting the PSG layer to the source and drain regions.

REFERENCES:
patent: 7098114 (2006-08-01), Syau et al.
patent: 2003/0211662 (2003-11-01), Yamazaki et al.
patent: 2006/0192250 (2006-08-01), Lee
Office Action dated Jun. 5, 2009 issued by the State Intellectual Property Office for counterpart Chinese Application No. 200710161135.6.

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