Semiconductor fin based nonvolatile memory device and method...

Details Semiconductor fin based nonvolatile memory device and method... Semiconductor fin based nonvolatile memory device and method...

2011-03-01

2011-03-01

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000

Reexamination Certificate

active

07898021

ABSTRACT:
A semiconductor structure and a method for fabricating the semiconductor structure include a semiconductor fin having a first side and a second side opposite the first side. A first gate dielectric and a charge storage layer are successively layered upon the first side of the semiconductor fin. A second gate dielectric and a gate electrode are layered upon the second side and the charge storage layer. The semiconductor structure comprises a nonvolatile semiconductor device.

REFERENCES:
patent: 6445032 (2002-09-01), Kumar et al.
patent: 6903967 (2005-06-01), Mathew et al.
patent: 6933558 (2005-08-01), Hill et al.
patent: 6963104 (2005-11-01), Wu et al.
patent: 7087952 (2006-08-01), Zhu et al.
Kumar et al., “Scaling of Flash NVRAM to 10's of nm by Decoupling of Storage From Read/Sense Using Back-Floating Gates,” IEEE Transactions on Nanotechnology, vol. 1, No. 4, Dec. 2002, pp. 247-254.

Affiliated with

Also associated with

Rating

Semiconductor fin based nonvolatile memory device and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor fin based nonvolatile memory device and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor fin based nonvolatile memory device and method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2700555