Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2011-03-22

2011-03-22

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S372000, C257S373000, C257S368000, C257S369000, C257S375000, C257S376000

Reexamination Certificate

active

07911003

ABSTRACT:
A semiconductor integrated circuit device including a semiconductor substrate and a MOS transistor having a source diffusion region and a drain diffusion region formed in the semiconductor substrate. A well is formed in the semiconductor substrate. A back gate diffusion region is defined in the vicinity of the source diffusion region or the drain diffusion region. The back gate diffusion region is of a conductivity type that is the same as that of the source diffusion region or the drain diffusion region. A potential control layer, arranged in the semiconductor substrate or under the well, controls the potential at the semiconductor substrate or the well.

REFERENCES:
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patent: 5905292 (1999-05-01), Sugiura et al.
patent: 6023186 (2000-02-01), Kuroda
patent: 6140686 (2000-10-01), Mizuno et al.
patent: 2006/0038584 (2006-02-01), Mitsuda
patent: 2007/0228474 (2007-10-01), Takeuchi
patent: 2004-228466 (2004-08-01), None

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