Semiconductor device and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C438S592000

Reexamination Certificate

active

08004046

ABSTRACT:
A semiconductor device has a gate insulating film formed on a semiconductor substrate, a second gate electrode portion of a gate electrode including a TiN film and a polysilicon film that are successively formed on the gate insulating film, and an interlayer insulating film formed on the semiconductor substrate so as to cover the gate electrode. A contact formed to extend through the interlayer insulating film and the polysilicon film is directly connected to the TiN film.

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patent: 2005/0186792 (2005-08-01), Takahashi
patent: 2006/0192258 (2006-08-01), Tsuchiya et al.
patent: 2007/0257302 (2007-11-01), Kang et al.
patent: 2008/0280405 (2008-11-01), Tsuchiya et al.
patent: 05-206461 (1993-08-01), None
patent: 2001-127158 (2001-05-01), None
patent: 2001-274391 (2001-10-01), None
patent: 2005-236120 (2005-09-01), None
patent: 2006-237372 (2006-09-01), None
patent: 2007-088122 (2007-04-01), None

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