Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-23
2011-08-23
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S592000
Reexamination Certificate
active
08004046
ABSTRACT:
A semiconductor device has a gate insulating film formed on a semiconductor substrate, a second gate electrode portion of a gate electrode including a TiN film and a polysilicon film that are successively formed on the gate insulating film, and an interlayer insulating film formed on the semiconductor substrate so as to cover the gate electrode. A contact formed to extend through the interlayer insulating film and the polysilicon film is directly connected to the TiN film.
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McDermott Will & Emery LLP
Panasonic Corporation
Prenty Mark
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