Semiconductor device having an elevated source/drain...

Details Semiconductor device having an elevated source/drain... Semiconductor device having an elevated source/drain...

2011-03-15

2011-03-15

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C257SE29267

Reexamination Certificate

active

07906809

ABSTRACT:
A semiconductor device with an elevated source/drain structure provided in each predetermined position defined by the oxide film and gate wiring on a semiconductor silicon substrate, where an orthographic projection image of a shape of an upper end portion of the elevated source/drain structure on the semiconductor silicon substrate along the direction normal to the semiconductor silicon substrate is substantially in agreement with a predetermined shape defined by the corresponding oxide film and gate wiring on the semiconductor silicon substrate, and at least one of orthographic projection images of cross-sections taken along planes parallel with the semiconductor silicon substrate of the elevated source/drain structure on the semiconductor silicon substrate along the direction normal to the semiconductor silicon substrate is larger than the predetermined shape defined by the corresponding oxide film and gate wiring on the semiconductor silicon substrate.

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