Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays
Reexamination Certificate
2011-07-26
2011-07-26
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
C257S738000, C257S786000
Reexamination Certificate
active
07985988
ABSTRACT:
A semiconductor device20formed on a semiconductor chip substrate30has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor36, the circuit blocks being covered on top with a protective film41to protect the circuits. A plurality of bumps23a, 23b, 23care formed, at least via the protective film41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps23a, 23b, 23cimpose stresses on the MOS transistors36, increasing the mobility of the MOS transistors36and thereby improving the performance of the semiconductor device20.
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Fukuda Toshiyuki
Kuwabara Kimihito
Motofuji Takuma
Yoshida Takayuki
Nguyen Cuong Q
Panasonic Corporation
Steptoe & Johnson LLP
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