Semiconductor device having circuit blocks in a single...

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays

Reexamination Certificate

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C257S738000, C257S786000

Reexamination Certificate

active

07985988

ABSTRACT:
A semiconductor device20formed on a semiconductor chip substrate30has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor36, the circuit blocks being covered on top with a protective film41to protect the circuits. A plurality of bumps23a, 23b, 23care formed, at least via the protective film41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps23a, 23b, 23cimpose stresses on the MOS transistors36, increasing the mobility of the MOS transistors36and thereby improving the performance of the semiconductor device20.

REFERENCES:
patent: 6963136 (2005-11-01), Shinozaki et al.
patent: 7554209 (2009-06-01), Satou et al.
patent: 7808107 (2010-10-01), Shinozaki et al.
patent: 52-120776 (1977-10-01), None
patent: 64-15957 (1989-01-01), None
patent: 2006-24853 (2006-01-01), None
patent: 2006-324320 (2006-11-01), None

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