Selective links in silicon hetero-junction bipolar...

Details Selective links in silicon hetero-junction bipolar... Selective links in silicon hetero-junction bipolar...

2011-01-25

2011-01-25

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C438S321000

Reexamination Certificate

active

07875908

ABSTRACT:
Bipolar transistors and methods of forming the bipolar transistors. The method including forming a P-type collector in a silicon substrate; forming an intrinsic base on the collector, the intrinsic base including a first N-type dopant species, germanium and carbon; forming an N-type extrinsic base over a first region and a second region of the intrinsic base, the first region over the collector and the second region over a dielectric adjacent to the collector, the N-type extrinsic base containing or not containing carbon; and forming a P-type emitter on the first region of the intrinsic base.

REFERENCES:
patent: 5962880 (1999-10-01), Oda et al.
patent: 6521974 (2003-02-01), Oda et al.
patent: 6852602 (2005-02-01), Kanzawa et al.
patent: 2002/0192918 (2002-12-01), Takagi et al.
patent: 2003/0189239 (2003-10-01), Kalnitsky et al.

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