Non-volatile semiconductor memory device and memory system...

Details Non-volatile semiconductor memory device and memory system... Non-volatile semiconductor memory device and memory system...

2011-01-18

2011-01-18

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185090, C365S185270, C365S185290, C365S185330

Reexamination Certificate

active

07872917

ABSTRACT:
Provided is a non-volatile semiconductor device. The non-volatile semiconductor memory devices including: first and second word line groups disposed in parallel; dummy word lines disposed between the first and second word line groups; a first bit line group intersecting the first word line group; and a second bit line group intersecting the second word line group, wherein the first and second word line groups, the first and second bit line groups, and the dummy word lines are disposed on a same well.

REFERENCES:
patent: 4977542 (1990-12-01), Matsuda et al.
patent: 6344994 (2002-02-01), Hamilton et al.
patent: 6987696 (2006-01-01), Wang et al.
patent: 7248500 (2007-07-01), Tamada et al.
patent: 7301815 (2007-11-01), Kurata et al.
patent: 7417895 (2008-08-01), Cho
patent: 7643345 (2010-01-01), Ishibashi
patent: 7652931 (2010-01-01), Park et al.
patent: 2005/0007822 (2005-01-01), Lee et al.
patent: 2009/0003047 (2009-01-01), Toda
patent: 2009/0040824 (2009-02-01), Iizuka
patent: 11086576 (1999-03-01), None

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