Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-03-01
2011-03-01
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S174000, C365S186000, C365S189160, C365S230060
Reexamination Certificate
active
07898839
ABSTRACT:
In the semiconductor memory device having a resistance memory element, a first transistor having a drain terminal connected to one end of the resistance memory element and a source terminal connected to a ground voltage, and a second transistor having source terminal connected to the resistance memory element, when a write voltage is applied to the resistance memory element via the second transistor to switch the resistance memory element from a low resistance state to a high resistance state, a voltage is controlled to be a value which is not less than a reset voltage and less than a set voltage by applying to a gate terminal of the second transistor a voltage which is not less than a total of the reset voltage and a threshold voltage of the second transistor and is less than a total of the set voltage and the threshold voltage.
REFERENCES:
patent: 2004/0114438 (2004-06-01), Morimoto
patent: 2004/0114444 (2004-06-01), Matsuoka
patent: 2004/0264244 (2004-12-01), Morimoto
patent: 2005/0122768 (2005-06-01), Fukumoto
patent: 2005/0174854 (2005-08-01), Tsushima et al.
patent: 2005/0185445 (2005-08-01), Osada et al.
patent: 2006/0097240 (2006-05-01), Lowrey et al.
patent: 2008/0192531 (2008-08-01), Tamura et al.
patent: 2004-185754 (2004-07-01), None
patent: 2004-234707 (2004-08-01), None
patent: 2005-025914 (2005-01-01), None
patent: 2005-092912 (2005-04-01), None
patent: 2005-216387 (2005-08-01), None
patent: 2005-267837 (2005-09-01), None
patent: WO 2007132525 (2007-11-01), None
I. G. Baek et al, “Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses”, IEBM, 2004, pp. 587-590.
International Search Report of PCT/JP2006/317529; Mailing Date of Dec. 12, 2006.
Fujitsu Limited
Fujitsu Patent Center
Hidalgo Fernando N
Hoang Huan
LandOfFree
Semiconductor memory device and method of writing into... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device and method of writing into..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of writing into... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2697899