Liquid crystal display device with double metal layer source...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Reexamination Certificate

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Details

Other Related Categories

C257SE21407

Type

Reexamination Certificate

Status

active

Patent number

07863120

Description

ABSTRACT:
A method of fabricating a liquid crystal display device includes, according to an embodiment of the present invention, forming a gate electrode on a substrate, forming a gate insulating layer over the gate electrode and on the substrate, forming a first metal layer on the first semiconductor layer and a second metal layer over the first metal layer, forming source and chain electrode by patterning a separation region in the first and second metal layers, and patterning the first metal layer and the first semiconductor layer in the same pattern.

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