Semiconductor device manufacturing: process – Making field effect device having pair of active regions...
Reexamination Certificate
2011-08-09
2011-08-09
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
C438S243000, C438S245000, C257SE21646
Reexamination Certificate
active
07993985
ABSTRACT:
A method for forming a semiconductor device with a single-sided buried strap is provided. The method includes the steps of providing a substrate with a trench, forming a semiconductor component in a lower portion of the trench to expose a higher portion of the trench, forming a first dielectric layer on a sidewall of the higher portion of the trench, forming a first conductive layer in the trench and adjacent to the first dielectric layer, forming a second dielectric layer on the first dielectric layer and the first conductive layer, forming a plurality of gate structures on the substrate, wherein one of the gate structures on the second dielectric layer is offset for a distance from the second dielectric layer, removing a portion of the second dielectric layer and a portion of the first dielectric layer to form an opening by using the gate structure as a mask, and forming a second conductive layer in the opening to electrically couple to the first conductive layer, whereby the semiconductor device with the single sided buried strap is formed.
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Office Action dated Aug. 14, 2010, issued in Taiwan Patent Application No. 096114933.
Chang Ming-Cheng
Shih Neng-Tai
Garber Charles D
Ingrassia Fisher & Lorenz P.C.
Mustapha Abdulfattah
Nanya Technology Corp.
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