Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-08-09

2011-08-09

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S154000, C438S157000, C438S597000, C438S655000, C438S664000

Reexamination Certificate

active

07993992

ABSTRACT:
There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively etched to form a contact pad or conductive interconnects.

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Office Action (Application No. 08-307443) with partial translation, Oct. 5, 2004, 7 pages.

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