Semiconductor memory device having a capacitor structure...

Details Semiconductor memory device having a capacitor structure... Semiconductor memory device having a capacitor structure...

2011-04-05

2011-04-05

Pizarro, Marcos D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S307000, C257S308000, C257S309000, C257S528000, C257SE23142, C438S396000

Reexamination Certificate

active

07919803

ABSTRACT:
A semiconductor memory device in which a plurality of capacitors each including a columnar lower electrode, a capacitor insulation film and an upper electrode are stacked with interlayer films therebetween, a contact plug connects an upper face of each lower electrode of a lower layer with a bottom face of each lower electrode of an upper layer, and another contact plug connects upper electrodes of the capacitors in respective layers with each other.

REFERENCES:
patent: 2001/0002710 (2001-06-01), Roberts et al.
patent: 2005/0145917 (2005-07-01), Takeuchi et al.
patent: 2000-156479 (2000-06-01), None
patent: 2003-197771 (2003-07-01), None
patent: 2003-234245 (2003-08-01), None
patent: 2003234245 (2003-08-01), None

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