Semiconductor device manufacturing method, semiconductor...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21585

Reexamination Certificate

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08008189

ABSTRACT:
A semiconductor device manufacturing method, includes the steps of forming an insulating film over a semiconductor substrate, thinning selectively a thick portion, whose film thickness is thicker than a reference value, of the insulating film, forming contact holes in a thinned portion of the insulating film25, and forming conductive plugs in the contact holes.

REFERENCES:
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 6458710 (2002-10-01), Burke
patent: 6767825 (2004-07-01), Wu
patent: 6803300 (2004-10-01), Higashi et al.
patent: 7078241 (2006-07-01), Son et al.
patent: 7183202 (2007-02-01), Lee et al.
patent: 7189650 (2007-03-01), Liu et al.
patent: 7259093 (2007-08-01), Hermes
patent: 63-272035 (1998-11-01), None
patent: 2002-43237 (2002-02-01), None
patent: 3556437 (2004-08-01), None

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