Method of programming memory device

Details Method of programming memory device Method of programming memory device

2011-08-16

2011-08-16

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185190

Reexamination Certificate

active

08000150

ABSTRACT:
A method of programming a memory device may include applying a program voltage to a memory cell of the memory device and consecutively applying a plurality of verifying voltages to the memory cell. The verifying voltages may be consecutively applied with a same voltage magnitude after applying the program voltage. The verifying voltages may be consecutively applied with sequentially decreasing magnitudes after applying the program voltage.

REFERENCES:
patent: 6459621 (2002-10-01), Kawahara et al.
patent: 6829172 (2004-12-01), Bloom et al.
patent: 7023730 (2006-04-01), Kouno
patent: 7023733 (2006-04-01), Guterman et al.
patent: 7088621 (2006-08-01), Guterman et al.

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