Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Thomas, Toniae M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S353000, C257S413000, C257S623000, C257SE29131
Reexamination Certificate
active
07994568
ABSTRACT:
A vertical transistor of a semiconductor device and a method for forming the same are disclosed. The vertical transistor comprises a silicon fin disposed on a semiconductor substrate, a source region disposed in the semiconductor substrate below a lower portion of the silicon fin, a drain region disposed in an upper portion of the silicon fin, a channel region disposed in a sidewall of the silicon fin between the source region and the drain region, a gate oxide film disposed in a surface of the semiconductor substrate and the sidewall of the silicon fin, and a pair of gate electrodes disposed on the gate oxide films.
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Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Thomas Toniae M
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