Structure for interconnect structure containing various...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S209000, C257S211000, C257S759000, C257S760000, C257SE21575, C257SE21577, C257SE21579, C257SE21580, C257SE21581, C257SE21583, C257SE21584, C257SE21585, C257SE21592, C257SE21627, C257SE21641

Reexamination Certificate

active

07956466

ABSTRACT:
A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.

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